cw argon laser annealing of ion-implanted silicon
cw argon laser annealing of ion-implanted silicon
复制标题
离子注入硅的连续波氩激光退火
DOI：
10.1063/1.90429
复制
发表时间：
1978
期刊：
影响因子：
--
通讯作者：
T. Venkatesan
中科院分区：
文献类型：
--
作者：
D. Auston;J. Golovchenko;P. Smith;C. Surko;T. Venkatesan
本文报道了离子注入硅在连续激光辐照下的退火行为。用沟道、原位反射率、相差显微镜和电阻率等手段研究了退火层的质量。报道了激光功率、晶体取向和注入剂量对退火质量的强烈影响。用聚焦探测激光进行的反射率测量表明，在熔点以下开始进行退火热处理，并在晶体表面形成了一层薄薄的液态硅层。我们得出结论，晶体恢复的物理机制类似于过退火后观察到的固态外延再生长。
We report on the annealing behavior of ion‐implanted silicon exposed to cw argon laser radiation. The quality of the annealing was studied using channeling, in situ reflectivity, phase‐contrast microscopy, and electrical resistivity. Strong dependence of anneal quality on laser power, crystal orientation, and implant dose is reported. Reflectivity measurements with a focused probing laser show that the onset of annealing occurs just below the melting point, and the annealing extends into the region where a thin layer of liquid silicon is formed at the crystal surface. We conclude that the physical mechanism responsible for crystal recovery is similar to the solid‐state epitaxial regrowth observed for over‐annealed samples.