Texture, Twinning, and Metastable “Tetragonal” Phase in Ultrathin Films of HfO2 on a Si Substrate
Texture, Twinning, and Metastable “Tetragonal” Phase in Ultrathin Films of HfO2 on a Si Substrate
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Si 基底上 HfO2 超薄膜的织构、孪晶和亚稳态“四方”相
DOI：
10.1149/1.3141705
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发表时间：
2009
影响因子：
3.9
通讯作者：
S. Gendt
中科院分区：
文献类型：
--
作者：
I. MacLaren;T. Ras;M. Mackenzie;A. Craven;D. McComb;S. Gendt
用暗场透射电子显微镜和选区电子衍射对生长在轻度氧化的Si（100）表面上的HfO2薄膜进行了观察。多晶膜具有100 nm量级的晶粒尺寸，并且许多晶粒在（110）和（001）平面上显示出孪晶的迹象。衍射研究表明，该薄膜具有很强的[110]面外织构，并且保留了亚稳（可能是四相）相的微小体积分数。讨论了织构、孪晶和亚稳相保留的原因。
Thin HfO 2 films grown on the lightly oxidized surface of Si(100) wafers have been examined using dark-field transmission electron microscopy and selected area electron diffraction in plan view. The polycrystalline film has a grain size of the order of 100 nm, and many of the grains show evidence of twinning on (110) and (001) planes. Diffraction studies showed that the film had a strong [110] out-of-plane texture and that a tiny volume fraction of a metastable (possibly tetragonal) phase was retained. The reasons for the texture, the twinning, and the retention of the metastable phase are discussed.