Improved hydrogen ionization rate in enhanced glow discharge plasma immersion ion implantation by enlarging the interaction path using an insulating tube.
Improved hydrogen ionization rate in enhanced glow discharge plasma immersion ion implantation by enlarging the interaction path using an insulating tube.
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DOI：
10.1063/1.3544022
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发表时间：
2011-02
期刊：
影响因子：
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通讯作者：
Zhuo Wang;Ying Zhu;Liuchun Li;Q. Lu;F. He;D. Dun;Fen Li;R. Fu;P. Chu
中科院分区：
文献类型：
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作者：
Zhuo Wang;Ying Zhu;Liuchun Li;Q. Lu;F. He;D. Dun;Fen Li;R. Fu;P. Chu
小尖头空心阳极和大板状阴极用于增强辉光放电等离子体浸没离子注入（EGD-PIII）。负电压脉冲形成的电场将电子从基板上排斥并集中在阳极附近以增强自辉放电过程。为了将EGD-PIII的应用扩展到低电离率的等离子体气体，使用绝缘管来增加电子和中性子的相互作用路径，以增强阳极附近的放电。基于单元内粒子代码、有限元方法和实验的数值模拟获得的结果表明，这种配置提高了电离率和随后的离子注入注量。该工艺特别适用于电离率低的气体，例如氢气和氦气。
A small pointed hollow anode and large tabular cathode are used in enhanced glow discharge plasma immersion ion implantation (EGD-PIII). Electrons are repelled from the substrate by the electric field formed by the negative voltage pulses and concentrate in the vicinity of the anode to enhance the self-glow discharge process. To extend the application of EGD-PIII to plasma gases with low ionization rates, an insulating tube is used to increase the interaction path for electrons and neutrals in order to enhance the discharge near the anode. Results obtained from numerical simulation based on the particle-in-cell code, finite element method, and experiments show that this configuration enhances the ionization rate and subsequent ion implant fluence. The process is especially suitable for gases that have low ionization rates such as hydrogen and helium.