Development of a four sub-cell inverted metamorphic multi-junction (IMM) highly efficient AM0 solar cell
Development of a four sub-cell inverted metamorphic multi-junction (IMM) highly efficient AM0 solar cell
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DOI：
10.1109/pvsc.2010.5614498
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发表时间：
2010-06
期刊：
影响因子：
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通讯作者：
A. Cornfeld;D. Aiken;B. Cho;A. Vance Ley;P. Sharps;M. Stan;T. Varghese
中科院分区：
文献类型：
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作者：
A. Cornfeld;D. Aiken;B. Cho;A. Vance Ley;P. Sharps;M. Stan;T. Varghese
我们已经确定IMM结构作为最好的车辆，以实现增加AM 0太阳能电池的效率超过传统的3结晶格匹配的GaInP/GaAs/Ge架构。基于我们在第33届PVSC [1]上展示的3 J-IMM III-V电池的开发工作，我们开发了4J-IMM AM 0太阳能电池。前三个子电池与我们的3 J-IMM电池中所包含的子电池相同。第四子电池由0.70eV GaInAs组成。这种电池结构需要扩展透明变质（MM）缓冲层以适应额外的2%失配、变质隧道二极管和第四（MM）子电池制造这种电池的工艺步骤与之前讨论的非常相似关于3 J-IMM电池。在28°C下，我们最好的CICed（盖玻璃互连电池）4J-IMM 2×2 cm 2电池实现了33.9%AM0（135.3 mW/cm 2）效率。
We have identified the IMM structure as the best vehicle to achieve increased AM0 solar cell efficiency beyond the conventional 3-junction lattice matched GaInP/GaAs/Ge architecture. Building on our efforts to develop a 3J-IMM III–V based cell presented at the 33rd PVSC [1], we have developed a 4J-IMM AM0 solar cell. The top three sub-cells are identical to that incorporated in our 3J-IMM cell. The fourth sub-cell is composed of 0.70eV GaInAs. This cell structure required an extension of the transparent metamorphic (MM) buffer layer to accommodate an additional 2% mismatch, a metamorphic tunnel diode, and the fourth (MM) sub-cell‥ The processing steps to fabricate this cell are very similar to those previously discussed with regard to the 3J-IMM cell. At 28°C, our best CICed (cover-glass interconnected cell) 4J-IMM 2×2 cm2 cell achieved a 33.9% AM0 (135.3 mW/cm2) efficiency.