Observation of the spin hall effect in semiconductors
Observation of the spin hall effect in semiconductors
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DOI：
10.1126/science.1105514
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发表时间：
2004-12-10
期刊：
影响因子：
56.9
通讯作者：
Awschalom, DD
中科院分区：
文献类型：
--
作者：
Kato, YK;Myers, RC;Awschalom, DD
利用克尔旋转显微镜对半导体沟道边缘附近的电致电子自旋极化进行了检测和成像。极化是平面外的，并且两个边缘的符号相反，与自旋霍尔效应的预测一致。对未应变的砷化镓和应变的砷化铟镓样品的测量表明，应变会改变零磁场下的自旋累积。应变样品的晶体取向的弱依赖性表明，该机制是外在的自旋霍尔效应。
Electrically induced electron-spin polarization near the edges of a semiconductor channel was detected and imaged with the use of Kerr rotation microscopy. The polarization is out-of-plane and has opposite sign for the two edges, consistent with the predictions of the spin Hall effect. Measurements of unstrained gallium arsenide and strained indium gallium arsenide samples reveal that strain modifies spin accumulation at zero magnetic field. A weak dependence on crystal orientation for the strained samples suggests that the mechanism is the extrinsic spin Hall effect.