Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems
Analogue switches made from boron nitride monolayers for application in 5G and terahertz communication systems
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DOI：
10.1038/s41928-020-0416-x
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发表时间：
2020-05-25
影响因子：
34.3
通讯作者：
Akinwande, Deji
中科院分区：
文献类型：
--
作者：
Kim, Myungsoo;Pallecchi, Emiliano;Akinwande, Deji
六方氮化硼 (hBN) 具有大带隙、高声子能量和原子级光滑的表面，不存在悬空键。因此，它已被广泛用作电介质来研究二维异质结构中的电子物理，以及用作二维晶体管和光电器件制造中的电介质。在这里，我们展示了 hBN 可用于创建模拟开关，用于无线电、5G 和太赫兹频率的通信系统中的应用。我们的方法依赖于原子级薄六方氮化硼的非易失性电阻开关能力。这些开关由夹在两个金电极之间的单层六方氮化硼组成，截止频率品质因数约为 129 THz，在 0.1 至 200 GHz 范围内具有低插入损耗 (= 10 dB)，以及高功率处理能力（约 20 dBm）和纳秒级开关速度，这些指标均优于现有固态开关。此外，这些开关的直流效率比其他非易失性开关高 50 倍。能耗指标，这是无处不在的移动系统的一个重要考虑因素。我们还展示了六方氮化硼开关在通信系统中的潜力，该通信系统在 100 GHz 下具有 8.5 Gbit s(-1) 数据传输速率，误码率低于 10(-10)。原子薄片六方氮化硼的电阻开关可用于创建模拟开关，用于无线电、5G 和太赫兹频率的通信系统应用。
Hexagonal boron nitride (hBN) has a large bandgap, high phonon energies and an atomically smooth surface absent of dangling bonds. As a result, it has been widely used as a dielectric to investigate electron physics in two-dimensional heterostructures and as a dielectric in the fabrication of two-dimensional transistors and optoelectronic devices. Here we show that hBN can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies. Our approach relies on the non-volatile resistive switching capabilities of atomically thin hBN. The switches are composed of monolayer hBN sandwiched between two gold electrodes and exhibit a cutoff-frequency figure of merit of around 129 THz with a low insertion loss (= 10 dB) from 0.1 to 200 GHz, as well as a high power handling (around 20 dBm) and nanosecond switching speeds, metrics that are superior to those of existing solid-state switches. Furthermore, the switches are 50 times more efficient than other non-volatile switches in terms of a d.c. energy-consumption metric, which is an important consideration for ubiquitous mobile systems. We also illustrate the potential of the hBN switches in a communication system with an 8.5 Gbit s(-1) data transmission rate at 100 GHz with a low bit error rate under 10(-10).Resistive switching in atomically thin sheets of hexagonal boron nitride can be used to create analogue switches for applications in communication systems across radio, 5G and terahertz frequencies.