Investigation of the electrical properties of vertically stacked interface-treated Josephson junctions
Investigation of the electrical properties of vertically stacked interface-treated Josephson junctions
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垂直堆叠界面处理约瑟夫森结的电特性研究
DOI：
10.1088/0953-2048/17/4/015
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发表时间：
2004
期刊：
影响因子：
--
通讯作者：
H. Hayakawa
中科院分区：
文献类型：
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作者：
Y. Yoshinaga;S. Izawa;K. Wakita;T. Ito;M. Inoue;A. Fujimaki;H. Hayakawa
为了了解垂直堆叠型界面处理约瑟夫森结的势垒结构，我们比较了堆叠结和斜坡边缘结的电学性质。随着临界电流密度（Jc）的增加，IcRn产品的两种类型的结增加和临界电流的蔓延下降。尽管如此，堆叠的结有较高的IcRn产品和较低的传播比那些斜坡边缘结与相同的顺序Jc。此外，我们还研究了临界电流和电导对结的温度依赖性，Jc值约为103 A cm−2。对Ic的依赖性无显著差异。相反，堆叠结的电导随着温度的升高而有所增加，这导致IcRn的减少。在4.2-30 K时，减少量很小;因此，我们认为减少量对于应用来说可以忽略不计。
In order to understand the barrier structure of vertically stacked-type interface-treated Josephson junctions, we compared the electrical properties of the stacked junctions with those of ramp-edge junctions. With increasing critical current density (Jc), IcRn products for both types of junction increased and the spread of critical current decreased. Nevertheless, the stacked junctions had higher IcRn products and lower spreads than those of ramp-edge junctions with Jc of the same order. Moreover, we investigated the temperature dependence of the critical current and the conductance for junctions with Jc values of around 103 A cm−2. No significant difference was found for the dependence of Ic. In contrast, the conductance of stacked junctions somewhat increased with increasing temperature, which resulted in the reduction of IcRn. The reduction is small at 4.2–30 K; we thus think that the reduction is negligible for applications.