Degradation of encapsulated perovskite solar cells driven by deep trap states and interfacial deterioration
Degradation of encapsulated perovskite solar cells driven by deep trap states and interfacial deterioration
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DOI：
10.1039/c7tc03733c
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发表时间：
2018-01-07
影响因子：
6.4
通讯作者：
Miyano, Kenjiro
中科院分区：
文献类型：
--
作者：
Khadka, Dhruba B.;Shirai, Yasuhiro;Miyano, Kenjiro
通过光电表征研究了封装的钙钛矿器件的降解。五个月后，封装器件的性能下降了约50%的初始值。器件性能的退化被发现是由界面复合和深陷阱辅助复合的钙钛矿。对温度依赖的电流-电压特性和电容谱的分析表明，界面复合激活能的降低、缺陷能级的加深和器件扩散势的降低导致器件参数随着老化而恶化。封装器件的降解可能由组分离子的解离和迁移控制，组分离子在钙钛矿层中诱导更深的缺陷能级并使界面随着老化而劣化。
The degradation of encapsulated perovskite devices has been investigated by optoelectronic characterization. The performance of the encapsulated device dropped by approximately 50% of the initial value after five months. The degradation of device performance was found to be influenced by both interface recombination and deep trap assisted recombination in the perovskite. The analysis of temperature dependent current-voltage characteristics and capacitance spectra revealed that the decrease in the activation energy of interface recombination, deepening of the defect levels and reduction in the diffusion potential of devices led to deterioration of device parameters with aging. The degradation of the encapsulated device might be governed by dissociation and migration of constituent ions which induce deeper defect levels in the perovskite layer and deteriorate the interface with aging.