Polariton and Free-Exciton-Like Photoluminescence in ZnO
Polariton and Free-Exciton-Like Photoluminescence in ZnO
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DOI：
10.1063/1.1412435
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发表时间：
2001-11
影响因子：
4
通讯作者：
D. C. Reynolds;D. Look;B. Jogai;T. Collins
中科院分区：
文献类型：
--
作者：
D. C. Reynolds;D. Look;B. Jogai;T. Collins
在ZnO中观察到一条不寻常的光致发光线X，其能量介于普通施主束缚激子（DBE）和自由激子（FEs）之间。在高载流子浓度的存在下，由第二个带隙以下的激光诱导，DBE的强度降低，由于屏蔽，和FE和X增加。因此，X具有自由激子而不是束缚激子的特性。然而，它的电场矢量位于垂直于c轴的平面内，这也是DBE的结果。X的出现讨论的极化激元图片。
An unusual photoluminescence line X has been observed in ZnO at an energy between that of the common donor-bound excitons (DBEs) and the free excitons (FEs). In the presence of a high carrier concentration, induced by a second below-band gap laser, the DBEs decrease in intensity, due to screening, and both the FEs and X increase. Thus, X has free-exciton, rather than bound-exciton, character. However, its electric-field vector lies in the plane perpendicular to the c axis, as is also found for the DBEs. The appearance of X is discussed in terms of the polariton picture.