Spin cast self-assembled monolayer field effect transistors
Spin cast self-assembled monolayer field effect transistors
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DOI：
10.1016/j.orgel.2011.11.025
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发表时间：
2012-03-01
影响因子：
3.2
通讯作者：
Jen, Alex K. -Y.
中科院分区：
文献类型：
--
作者：
Hutchins, Daniel O.;Acton, Orb;Jen, Alex K. -Y.
Top-contact self-assembled monolayer field-effect transistors (SAMFETs) were fabricated through both spin-coating and solution assembly of a semiconducting phosphonic acid-based molecule (11-(5 ''''-butyl-[2,2 '; 5 ',2 ''; 5 '',2 '''; 5 ''',2 '''']quinquethiophen-5-yl)undecylphosphonic acid) (BQT-PA). The field-effect mobilities of both spin-cast and solution assembled SAMFETs were 1.1-8.0 x 10 (6) cm(2) V (1) s (1) for a wide range of channel lengths (between 12 and 80 mu m). The molecular monolayers were characterized by atomic force microscopy (AFM), attenuated total reflectance-Fourier transform infrared spectroscopy (ATR-FTIR), and near edge X-ray absorption fine structure (NEXAFS) spectroscopy. It was found that the BQT-PA monolayer films exhibit dense surface coverage, bidentate binding, and tilt angles of similar to 32 degrees and similar to 44 degrees for the thiophene rings and alkyl chain, respectively. These results indicate that rapid throughput of fabricating SAMFETs is possible even by spin-coating. (C) 2011 Elsevier B. V. All rights reserved.
