Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing
Formation of amorphous alloys on 4H-SiC with NbNi film using pulsed-laser annealing
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DOI：
10.1063/1.4955406
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发表时间：
2016-07-04
影响因子：
4
通讯作者：
Kuroki, Shin-Ichiro
中科院分区：
文献类型：
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作者：
De Silva, Milantha;Ishikawa, Seiji;Kuroki, Shin-Ichiro
在4 H-SiC上形成含有Ni-Si-Nb-C的非晶合金，从而产生低电阻欧姆接触电极。在SiC上的常规硅化镍（NiSi）电极中，在硅化物/SiC界面处发生碳聚集，并且NiSi和SiC衬底之间的接触电阻变大。为了抑制碳团聚，引入了纳秒非平衡激光退火，并且为了形成金属碳化物，引入了碳间隙型金属Nb和Mo。在n型4 H-SiC晶片的C面侧形成Ni、Nb、Mo、Nb/Ni、Mo/Ni多层接触和NbNi混合接触。研究了45 ns脉冲激光退火后的电接触性能。结果，通过NbNi膜，形成了具有Ni-Si-Nb-C的非晶合金，并且实现了5.3 × 10（-4）Ω cm（2）的低接触电阻率。出版社：AIP Publishing
Amorphous alloys containing Ni-Si-Nb-C were formed on 4H-SiC creating a low resistance Ohmic contact electrode. In a conventional nickel silicide (NiSi) electrode on SiC, a carbon agglomeration at the silicide/SiC interface occurs, and contact resistance between NiSi and SiC substrate becomes larger. For carbon agglomeration suppression, nanosecond non-equilibrium laser annealing was introduced, and to form metal carbides, carbon-interstitial type metals Nb and Mo were introduced. Ni, Nb, Mo, Nb/Ni, Mo/Ni multilayer contacts, and NbNi mixed contact were formed on the C-face side of n-type 4H-SiC wafers. The electrical contact properties were investigated after a 45 ns pulse laser annealing in N-2 ambient. As a result, with NbNi film, an amorphous alloy with Ni-Si-Nb-C was formed, and a low specific contact resistance of 5.3 x 10(-4) Omega cm(2) was realized. Published by AIP Publishing.