Hot Carrier Trapping in High-Purity and Doped Germanium Crystals at Millikelvin Temperatures
Hot Carrier Trapping in High-Purity and Doped Germanium Crystals at Millikelvin Temperatures
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毫开尔文温度下高纯度掺杂锗晶体中的热载流子捕获
DOI：
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发表时间：
2014
期刊：
影响因子：
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通讯作者：
E. Olivieri
中科院分区：
文献类型：
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作者：
M. Piro;A. Broniatowski;S. Marnieros;L. Dumoulin;E. Olivieri
一组新的实验数据的平均漂移长度和漂移速度的超纯和轻掺杂（n型和p型）锗单晶在mK温度下的电场的函数的热电子和空穴。测量是在$$sim $$0.1和15 V/cm之间的字段范围内进行的，典型的用于暗物质搜索的低温锗探测器的操作。实验数据的分析强烈表明，占主导地位的捕获中心是在中性状态的掺杂剂物种。
A new set of experimental data is presented for the mean drift lengths and the drift velocities of hot electrons and holes as a function of the electric field in ultra-pure and in lightly doped (n- and p-type) germanium single crystals at mK temperatures. Measurements are made in the field range between $$sim $$∼0.1 and 15 V/cm, typical for the operation of cryogenic germanium detectors for dark matter search. The analysis of the experimental data strongly suggests that the dominant trapping centers are the dopant species in the neutral state.