Evidence of carbon-related defects at the SiC MOS interface and mechanism of defect passivation by nitridation and phosphorus treatment - chemical analyses combined with DFT calculations
Evidence of carbon-related defects at the SiC MOS interface and mechanism of defect passivation by nitridation and phosphorus treatment - chemical analyses combined with DFT calculations
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SiC MOS界面与碳相关的缺陷的证据以及氮化和磷处理的缺陷钝化机制——化学分析结合DFT计算
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
Atsushi Oshiyama and Tsunenobu Kimoto
中科院分区：
文献类型：
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作者：
Takuma Kobayashi;Yu-ichiro Matsushita;Takafumi Okuda;Atsushi Oshiyama and Tsunenobu Kimoto
