Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition
Low resistivity transparent conducting Al-doped ZnO films prepared by pulsed laser deposition
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DOI：
10.1016/s0040-6090(03)01158-1
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发表时间：
2003-12-15
期刊：
影响因子：
2.1
通讯作者：
Okuda, M
中科院分区：
文献类型：
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作者：
Agura, H;Suzuki, A;Okuda, M
采用脉冲激光沉积的方法在玻璃衬底上生长了一系列的AZO薄膜，并将其分为AZO （Al2O3: 1 wt.%）和AZO （Al2O3: 2 wt.%）。在垂直于羽流的磁场中，基底温度为230度，薄膜沉积发生。为了抑制强激光能量引起的液滴产生，将激光能量密度降低到0.75 J/cm(2) （15 mJ）。对于在靶与衬底距离为25 mm处生长的约280 nm厚的azo薄膜，我们获得了8.54 x 10(-5) Omega的最低电阻率。Cm，在可见光范围内平均透过率大于88%。在TEM和XRD的横截面观察中，晶体生长的规律是由衬底与薄膜之间的界面直接产生的。(C) 2003 Elsevier Science B.V.版权所有
A series of AZO films were grown on glass substrates by a method of pulsed laser deposition using a split target divided into AZO (Al2O3: 1 wt.%) and AZO (Al2O3: 2 wt.%). The film deposition took place at a substrate temperature of 230 degreesC within a magnetic field applied perpendicularly to the plume. To suppress the droplet generation caused by the intense laser energy, the laser energy density was reduced to 0.75 J/cm(2) (15 mJ). For an approximately 280-nm thick-AZO film grown at a target-to-substrate distance of 25 mm, we obtained the lowest resistivity of 8.54 x 10(-5) Omega.cm and an average transmittance of more than 88% in the visible range. In the cross-sectional TEM observation and XRD spectra, the regularity in the crystal growth was generated immediately from the interface between the substrate and the film. (C) 2003 Elsevier Science B.V. All rights reserved.