Carrier control of graphene driven by the proximity effect of functionalized self-assembled monolayers.
Carrier control of graphene driven by the proximity effect of functionalized self-assembled monolayers.
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DOI：
10.1021/nl201607t
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发表时间：
2011-08
期刊：
影响因子：
10.8
通讯作者：
Kazumichi Yokota;K. Takai;T. Enoki
中科院分区：
文献类型：
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作者：
Kazumichi Yokota;K. Takai;T. Enoki
我们通过在SiO2衬底上形成的几种类型的自组装单分子层（SAM）产生的静电势来证明石墨烯的载流子控制。对于在全氟烷基硅烷-SAM上的单层石墨烯，拉曼G带的硬化指示由累积的空穴载流子引起的费米能级的大的下移（π-0.8eV）。同时，氨基芳基硅烷-SAM在石墨烯中积累了电子载流子，补偿了环境气氛下吸附分子掺杂的空穴载流子。目前的结果和他们的理论分析表明，使用SAM分子的偶极矩可以系统地调节静电势影响石墨烯，而不破坏其固有的电子结构，让我们知道，邻近效应的SAM是一个有前途的方式在发展石墨烯基固态电子学。
We demonstrated the carrier control of graphene by employing the electrostatic potential produced by several types of self-assembled monolayer (SAM) formed on SiO(2) substrates. For single layer graphene on perfluoroalkylsilane-SAM, the stiffening of the Raman G-band indicates a large down shift of the Fermi level (∼-0.8 eV) by accumulated hole carriers. Meanwhile, aminoarylsilane-SAM accumulated electron carriers, which compensate the hole carriers doped by adsorbed molecules under the ambient atmosphere, in graphene. The present results and their theoretical analysis reveal that the use of the dipole moments of SAM molecules can systematically modulate the electrostatic potential affecting graphene without destroying its intrinsic electronic structure and let us know that the proximity effect of the SAMs is a promising way in developing graphene-based solid state electronics.