Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
Molecular beam epitaxy of GaBiAs on (311)B GaAs substrates
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GaBiAs 在 (311)B GaAs 衬底上的分子束外延
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
J. Misiewicz
中科院分区：
文献类型：
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作者：
M. Henini;J. Ibáñez;M. Schmidbauer;M. Shafi;S. Novikov;L. Turyanska;S. Molina;D. L. Sales;M. Chisholm;J. Misiewicz
本文报道了在（311）B GaAs衬底上用分子束外延生长GaBixAs 1 −x外延层的研究。我们使用高分辨率X射线衍射（HRXRD），透射电子显微镜，和Z-对比度成像来表征所生长的材料的结构特性。我们发现，结合到GaBiAs合金，由HRXRD测定，是sizably更大的（311）B外延层比（001）外延层，从而引起降低的带隙能量，通过光学透射光谱。
We report the growth by molecular beam epitaxy of GaBixAs1−x epilayers on (311)B GaAs substrates. We use high-resolution x-ray diffraction (HRXRD), transmission electron microscopy, and Z-contrast imaging to characterize the structural properties of the as-grown material. We find that the incorporation of Bi into the GaBiAs alloy, as determined by HRXRD, is sizably larger in the (311)B epilayers than in (001) epilayers, giving rise to reduced band-gap energies as obtained by optical transmission spectroscopy.