QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
QUASINEUTRAL LIMIT OF THE DRIFT-DIFFUSION MODEL FOR SEMICONDUCTORS WITH GENERAL INITIAL DATA
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DOI：
10.1142/s0218202503002593
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发表时间：
2003-04
影响因子：
3.5
通讯作者：
C. Schmeiser;Shu Wang
中科院分区：
文献类型：
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作者：
C. Schmeiser;Shu Wang
本文研究了具有一般初始数据的半导体双极漂移扩散模型中允许存在初始层时德拜长度为零的极限（电荷中性极限）。拟中性极限（零德拜长度极限）是严格执行通过使用两个不同的熵泛函，产生适当的一致估计。这一研究推广了文献[1]的结果。图7和图8表示没有初始层出现的电荷中性初始数据。
The limit for vanishing Debye length (charge neutral limit) in a bipolar drift-diffusion model for semiconductors with general initial data allowing the presence of an initial layer is studied. The quasineutral limit (zero-Debye-length limit) is performed rigorously by using two different entropy functionals which yield appropriate uniform estimates. This investigation extends the results of Refs. 7 and 8 for charge neutral initial data where no initial layer occurs.