Evaluation of long carrier lifetimes in thick 4H silicon carbide epitaxial layers
Evaluation of long carrier lifetimes in thick 4H silicon carbide epitaxial layers
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DOI：
10.1063/1.3517487
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发表时间：
2010-11-15
影响因子：
4
通讯作者：
Tsuchida, Hidekazu
中科院分区：
文献类型：
--
作者：
Miyazawa, Tetsuya;Ito, Masahiko;Tsuchida, Hidekazu
使用碳注入/退火方法制备的类似于265 μ m厚的n型4 H碳化硅外延层的载流子寿命进行了评估。一个非常长的少数载流子寿命为18.5 μ s和19.2 μ s的高注入寿命分别从时间分辨的光致发光和微波光电导衰减测量进行了评估。根据外延层厚度与载流子寿命的关系，消除了表面复合对载流子寿命的影响，并讨论了体寿命和空穴扩散常数。(C)2010年美国物理学会。[doi 10.1063/1.3517487]
The carrier lifetime of similar to 265 mu m thick n-type 4H silicon carbide epilayers prepared using the carbon-implantation/annealing method was evaluated. An extraordinarily long minority carrier lifetime of 18.5 mu s and a high injection lifetime of 19.2 mu s were evaluated from time-resolved photoluminescence and microwave photoconductivity decay measurements, respectively. Based on the relationship between the epilayer thickness and carrier lifetime, the influence of surface recombination on the carrier lifetime was eliminated, and the bulk lifetime and hole diffusion constant were discussed. (C) 2010 American Institute of Physics. [doi:10.1063/1.3517487]