New Pyrolysis Route to GaN Quantum Dots
New Pyrolysis Route to GaN Quantum Dots
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GaN 量子点的新热解路线
DOI：
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发表时间：
2006
期刊：
影响因子：
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通讯作者：
P. G. V. Patten
中科院分区：
文献类型：
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作者：
Guiquan Pan;ठand Martin E. Kordesch;P. G. V. Patten
报道了一种新的生成GaN的化学反应。在适当的条件下，该反应产生具有强激子量子约束的胶体GaN量子点。报道了2 ~ 3nm直径颗粒的高产率生产。在GaN体带隙能量大于600mev的4.1 ev附近观测到带边吸收和发射。
A new chemical reaction is reported that produces GaN. Under the appropriate conditions, this reaction yields colloidal GaN quantum dots exhibiting strong exciton quantum confinement. High-yield production of 2−3 nm diameter particles is reported. Band edge absorption and emission is observed near 4.1 eVmore than 600 meV above the bulk band gap energy of GaN.