Effect of oxygen pressure on pulsed laser deposited WO3 thin films for photoelectrochemical water splitting
Effect of oxygen pressure on pulsed laser deposited WO3 thin films for photoelectrochemical water splitting
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氧压对脉冲激光沉积 WO3 薄膜光电化学分解水的影响
DOI:
10.1016/j.jallcom.2017.06.108
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发表时间:
2017-10-25
影响因子:
6.2
通讯作者:
Zeng, Xierong
中科院分区:
文献类型:
--
作者:
Mai, Manfang;Ma, Xinzhou;Zeng, Xierong
Tungsten oxide (WO3) thin films on fluorine-doped tin oxide (FTO) coated glass substrates are fabricated by pulsed laser deposition for photoelectrochemical water splitting. The effects of oxygen pressure during deposition on the structure, morphology, optical properties and photoelectrochemical performance of the films have been systematically evaluated. Columnar growth characteristic ofWO(3) thin films is observed at oxygen pressure higher than 8 Pa. The grain size increases with increasing oxygen pressure in the range of 1-13 Pa then decreases with further increasing oxygen pressure from 13 Pa to 30 Pa. Pure monoclinic phase of WO3 has been obtained for samples deposited above 13 Pa. Decreasing oxygen pressure below 8 Pa leads to an oxygen deficient surface with a substoichiometric phase. The film prepared at 13 Pa exhibits the best photoelectrochemical performance with a photocurrent density as high as 1.9 mA/cm(2) under a xenon lamp illumination in 0.1 M Na2SO4 electrolyte. Furthermore, hydrogen evolution conducted with a three-electrode configuration and a two-electrode configuration is presented and discussed. (C) 2017 Elsevier B.V. All rights reserved.