Tunable Valley and Spin Polarizations in BiXO3/BiIrO3 (X = Fe, Mn) Ferroelectric Superlattices.
Tunable Valley and Spin Polarizations in BiXO3/BiIrO3 (X = Fe, Mn) Ferroelectric Superlattices.
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DOI：
10.1021/acsami.7b18379
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发表时间：
2018-01
影响因子：
9.5
通讯作者：
Li Yin;Xiaocha Wang;W. Mi
中科院分区：
文献类型：
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作者：
Li Yin;Xiaocha Wang;W. Mi
谷自由度和自旋自由度的产生和调制是多功能电子器件的关键。在此基础上，利用自旋轨道耦合第一性原理计算研究了BiXO3/BiIrO3 （X = Fe, Mn）铁电超晶格中的电子结构。与以往的BiAlO3/BiIrO3体系不同，双层BiIrO3的谷极化和自旋极化都是在BiXO3/BiIrO3超晶格中实现的，其中谷极化可以通过铁或锰的自旋取向来实现。特别是，BiFeO3和BiIrO3中相对平行和反平行的铁电极化方向可以切换BiFeO3/BiIrO3超晶格中的谷注入。总的来说，在BiFeO3/BiIrO3铁电超晶格中可调谐的谷和自旋极化为开发非易失性数据存储器和谷自旋器件铺平了道路。
The generation and modulation on valley and spin degrees of freedom are essential for multifunctional electronic devices. Herewith, the electronic structures in BiXO3/BiIrO3 (X = Fe, Mn) ferroelectric superlattices are studied by first-principles calculations with spin-orbital coupling. Different from the previous BiAlO3/BiIrO3 system, both valley and spin polarizations in bilayered BiIrO3 are achieved in BiXO3/BiIrO3 superlattices, where the spin polarization in the valley can be engineered by the spin orientation of Fe or Mn owing to the xy-plane orbitals. Especially, the relatively parallel and antiparallel directions of ferroelectric polarization in BiFeO3 and BiIrO3 can switch the valley injection in BiFeO3/BiIrO3 superlattices. Overall, the tunable valley and spin polarizations in BiFeO3/BiIrO3 ferroelectric superlattices pave a way for developing nonvolatile data memories and valley-spin devices.