The Formation and Stability of Alkylthiol Monolayers on Carbon Substrates.
The Formation and Stability of Alkylthiol Monolayers on Carbon Substrates.
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碳基底上烷基硫醇单层的形成和稳定性。
DOI：
10.1021/jp102821x
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Smith,LloydM
中科院分区：
文献类型：
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作者：
Lockett,MatthewR;Smith,LloydM
研究了非晶碳薄膜表面烷基硫醇单分子膜的形成及其稳定性。通过两步湿化学方法制备烷基硫醇单层，其中碳表面首先被卤化，然后与（4-（三氟甲基）苯基）甲烷乙炔（4 tBM）孵育。4 tBM在取代反应中共价连接到表面，其中4 tBM硫醇取代表面卤素。取代机制的研究表明，单层的形成是由表面结合的卤素的性质，以及浓度和亲核性的4 tBM硫原子，符合双分子（SN 2）取代反应机制。烷基硫醇单层在宽范围的溶剂、pH和温度条件下是稳定的。
The formation and stability of alkylthiol monolayers on amorphous carbon thin films are investigated. Alkylthiol monolayers were prepared via a two-step, wet chemical process in which the carbon surface was first halogenated and then incubated with (4-(trifluoromethyl)phenyl)methanethiol (4tBM). The 4tBM covalently attaches to the surface in a substitution reaction in which the 4tBM thiol replaces the surface halogen. Studies of the substitution mechanism showed that monolayer formation is affected by the nature of the surface-bound halogen as well as the concentration and nucleophilicity of the 4tBM sulfur atom, consistent with a bimolecular (SN2) substitution reaction mechanism. The alkylthiol monolayers are stable over a wide range of solvents, pH, and temperature conditions.