GaNAs avalanche photodiode operating at 0.94 μm
GaNAs avalanche photodiode operating at 0.94 μm
复制标题
工作波长为 0.94 μm 的 GaN 雪崩光电二极管
DOI：
10.1063/1.126485
复制
发表时间：
2000
影响因子：
4
通讯作者：
J. Campbell
中科院分区：
文献类型：
--
作者：
G. Kinsey;D. Gotthold;A. Holmes;B. Streetman;J. Campbell
本文报道了用生长在GaAs上的GaNAs制作的p-i-n雪崩光电二极管（APD）。材料中的过量噪声的表征用于确定电离系数的比率（k=β/α）为k=0.4。在0.94 μm处，氮掺杂量为0.75%时，量子效率大于25%。APD表现出较低的暗电流（<60 nA/mm 2，在90%的击穿）和42 GHz的增益带宽积。因此，GaN显示出将GaAs基APD的操作扩展到更长波长的前景。
A p-i-n avalanche photodiode (APD) using GaNAs grown on GaAs has been demonstrated. Characterization of the excess noise in the material was used to determine that the ratio of ionization coefficients (k=β/α) is k=0.4. The quantum efficiency was above 25% at 0.94 μm for 0.75% nitrogen incorporation. The APDs exhibited low dark currents (<60 nA/mm2 at 90% of breakdown) and a gain-bandwidth product of 42 GHz. GaNAs therefore shows promise for extending the operation of GaAs-based APDs to longer wavelengths.