32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches
32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches
复制标题
DOI：
10.1109/tns.2011.2171715
复制
发表时间：
2011-11
影响因子：
1.8
通讯作者：
K. Rodbell;D. Heidel;J. Pellish;Paul W. Marshall;Henry H. K. Tang;Conal E. Murray;Ken LaBel;Michael S. Gordon;Kevin Stawiasz;J. Schwank;M. Berg;Hak Kim;M. Friendlich;A. Phan;C. Seidleck
中科院分区：
文献类型：
--
作者：
K. Rodbell;D. Heidel;J. Pellish;Paul W. Marshall;Henry H. K. Tang;Conal E. Murray;Ken LaBel;Michael S. Gordon;Kevin Stawiasz;J. Schwank;M. Berg;Hak Kim;M. Friendlich;A. Phan;C. Seidleck
给出了CMOS、绝缘体上硅（SOI）、32 nm和45 nm叠层和DICE锁存器的单粒子翻转（SEU）实验数据和模拟结果。新的数据分析被证明是重要的硬度保证蒙特卡洛建模与一个现实的重离子轨道结构，沿着与一个新的可视化援助（角度相关的横截面分布，ADCD），允许一个快速评估的改进，或限制，一个特定的闩锁设计。人们发现这是一种有效的技术，可以对替代32纳米SOI锁存器布局进行SEU预测。
Single event upset (SEU) experimental heavy ion data and modeling results for CMOS, silicon-on-insulator (SOI), 32 nm and 45 nm stacked and DICE latches are presented. Novel data analysis is shown to be important for hardness assurance where Monte Carlo modeling with a realistic heavy ion track structure, along with a new visualization aid (the Angular Dependent Cross-section Distribution, ADCD), allows one to quickly assess the improvements, or limitations, of a particular latch design. It was found to be an effective technique for making SEU predictions for alternative 32 nm SOI latch layouts.