SURFACE STRUCTURES AND SURFACE CONDUCTANCE DURING METAL ADSORPTION ON SEMICONDUCTORS
SURFACE STRUCTURES AND SURFACE CONDUCTANCE DURING METAL ADSORPTION ON SEMICONDUCTORS
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半导体上金属吸附过程中的表面结构和表面电导
DOI：
10.1142/s0218625x97001140
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发表时间：
1997
期刊：
影响因子：
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通讯作者：
S. Ino
中科院分区：
文献类型：
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作者：
S. Ino
研究了Si（111）表面金属“两步沉积”外延生长模式。通过使用RHEED-TRAXS（全反射角X射线光谱）分析生长期间的组分的深度分布。我们首先制备了-（Ag，Au，Ga），-Sn和（4×1）-In结构，然后在室温下在这些表面上沉积第二金属（Ag，Au，Sn，Ga和In）。观察到的生长过程分为五种生长模式：普通生长（O）、合金化生长（A）、替代原子生长（S）、粒子形成生长模式（P）和浮动原子生长（F）。在生长过程中，我们还测量了表面电导率，显示出有趣的行为。考虑到生长模式、原子排列、表面成分、费米能级钉扎和能带弯曲等因素，这些结果可以得到部分理解。
Epitaxial growth modes for "two-step deposition" processes of metals on a Si(111) surface were investigated. Depth distributions of composition during the growth were analyzed by using RHEED-TRAXS (total reflection angle X-ray spectroscopy). We first made -(Ag, Au, Ga), -Sn and (4×1)-In structures, and then second metals (Ag, Au, Sn, Ga and In) were deposited on these surfaces at room temperature. Growth processes observed are classified into five growth modes: ordinary growth (O), alloying growth (A), substitution atom growth (S), particle formation growth mode (P) and floating atom growth (F). During the growth processes, we measured also surface conductivities which showed interesting behaviors. These results can be partly understood considering the growth modes, atomic arrangement, surface composition, Fermi level pinning and band bending, etc.