Technical saturation and magnetization steps in diluted magnetic semiconductors: Predictions and observations
Technical saturation and magnetization steps in diluted magnetic semiconductors: Predictions and observations
复制标题
稀磁半导体中的技术饱和和磁化步骤：预测和观察
DOI：
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发表时间：
1984
期刊：
影响因子：
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通讯作者：
A. Wold
中科院分区：
文献类型：
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作者：
Y. Shapira;S. Foner;D. Ridgley;K. Dwight;A. Wold
A model for the high-field magnetization of II-VI semimagnetic compound semiconductors at low temperatures is presented. It applies for low Mn concentrations. The model explains quantitatively and without adjustable parameters the magnetization of ${mathrm{Cd}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{Te}$, ${mathrm{Cd}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{Se}$, ${mathrm{Cd}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{S}$, ${mathrm{Zn}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{Se}$, and ${mathrm{Zn}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{S}$ near 100 kOe for $Tl2$ K. At higher magnetic fields, magnetization steps are predicted. The first step is observed in ${mathrm{Cd}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{Se}$ and ${mathrm{Zn}}_{1ensuremath{-}x}{mathrm{Mn}}_{x}mathrm{Se}$, and is used to determine the nearest-neighbor exchange constant. The results support a random distribution of Mn ions.
