Oriented of micron-thick Y3Fe5O12 film on Gd3Ga5O12 substrate based on layer by layer growth method
Oriented of micron-thick Y3Fe5O12 film on Gd3Ga5O12 substrate based on layer by layer growth method
复制标题
基于逐层生长法在Gd3Ga5O12衬底上定向制备微米厚Y3Fe5O12薄膜
DOI：
10.1016/j.matlet.2018.01.152
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发表时间：
2018
影响因子：
3
通讯作者：
Zheng Liang
中科院分区：
文献类型：
--
作者：
Zheng Hui;Zheng Peng;Feng Qi;Deng Jiangxia;Ying Zhihua;Zheng Liang
本文采用磁控溅射法在Gd_3Ga_5 O_（12）基片上沉积了微米厚的钇铁石榴石铁氧体薄膜。研究了逐层生长法对薄膜形貌、晶体结构和磁性能的影响。X射线衍射θ-2θ分析表明，采用逐层生长法可以使薄膜的最大厚度增加。此外，扫描电子显微镜（SEM）结果表明，在2.4 μm@800 nm条件下制备的薄膜具有良好的形貌，晶粒尺寸均匀。磁滞回线和铁磁共振谱表明，这种逐层生长方法可以有效地提高薄膜的饱和磁化强度，降低铁磁共振线宽。具体地说，用这种逐层生长方法获得了取向性好的微米厚（2.4 μm）YIG薄膜，其FMR线宽仅为12 Oe。
In this paper, oriented of micron-thick yttrium-iron-garnet ferrite films were deposited on Gd3Ga5O12substrate by magnetron sputtering based on layer-by-layer growth method. The effect of layer by layer growth method on films morphology, crystal structure and magnetic properties were investigated. X-ray diffraction θ-2θ reveals the maximum thickness of oriented film was increased by layer-by-layer growth method. In addition, scanning electron microscopy displays excellent morphology with uniform size of grain for the film prepared under 2.4 μm@800 nm condition. Magnetic hysteresis loops and FMR spectrum represent this layer-by-layer growth method can effective increase film saturation magnetization and decrease FMR linewidth. Specifically, oriented micron-thick (2.4 μm) YIG film with only 12 Oe of FMR linewidth has been obtained by this layer-by-layer growth method.