Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
Comprehensive Study of the Electron Scattering Mechanisms in 4H-SiC MOSFETs
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DOI：
10.1109/ted.2015.2447216
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发表时间：
2015-08-01
影响因子：
3.1
通讯作者：
Pichler, Peter
中科院分区：
文献类型：
--
作者：
Uhnevionak, Viktoryia;Burenkov, Alexander;Pichler, Peter
利用电流 - 电压和霍尔效应测量方法，研究了掺杂浓度和温度对横向n沟道碳化硅金属 - 氧化物 - 半导体场效应晶体管（SiC MOSFET）沟道输运特性的影响。为了解释电学测量结果，进行了数值技术计算机辅助设计（TCAD）模拟。开发并应用了一种包括计算SiC MOSFET沟道中霍尔因子的模拟方法。此外，提出了一种新的体迁移率模型，用以解释不同背景掺杂浓度下MOSFET特性的温度依赖性。基于模拟结果和测量结果之间的良好一致性，对SiC MOSFET沟道中的散射机制进行了研究。
The effects of doping concentration and temperature upon the transport properties in the channel of lateral n-channel SiC MOSFETs have been studied using current-voltage and Hall-effect measurements. To interpret the electrical measurements, numerical TCAD simulations have been performed. A simulation methodology that includes the calculation of the Hall factor in the channel of SiC MOSFETs has been developed and applied. In addition, a new model for the bulk mobility has been suggested to explain the temperature dependence of the MOSFET characteristics with different background doping concentrations. Based on the good agreement between the simulated and the measured results, scattering mechanisms in the channel of SiC MOSFETs have been studied.