Electrically Stable, Solution-Processed Amorphous Oxide IZO Thin-Film Transistors Through a UV-Ozone Assisted Sol-Gel Approach
Electrically Stable, Solution-Processed Amorphous Oxide IZO Thin-Film Transistors Through a UV-Ozone Assisted Sol-Gel Approach
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DOI：
10.1109/ted.2014.2303796
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发表时间：
2014-04-01
影响因子：
3.1
通讯作者：
Bown, Mark
中科院分区：
文献类型：
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作者：
Singh, Thokchom Birendra;Jasieniak, Jacek Jaroslaw;Bown, Mark
金属乙酰丙酮化物是用于存款适用于薄膜场效应晶体管（TFT）的In-Zn-O（IZO）的非晶金属氧化物薄膜的常规溶胶-凝胶前体。在本文中，我们将这种传统的方法与沉积后的UV-臭氧处理相结合，以有效地减少任何热处理步骤之前的碳杂质。因此，我们发现，体金属氧化物形成的速率增强，从而能够实现高迁移率晶体管所需的处理温度的显着降低。在300摄氏度下处理的优化TFT结构显示出35 cm（2）/Vs的n型迁移率，通断比为10（7）。此外，这种器件的正偏置应力测试被发现表现出一个最低的阈值电压漂移的任何溶液处理的非晶TFT制造没有钝化层。
Metal acetylacetonates are conventional sol-gel precursors used to deposit thin amorphous metal oxide films of In-Zn-O (IZO) suitable for thin-film field effect transistors (TFTs). In this paper, we couple this traditional approach with a postdeposition UV-ozone treatment to effectively reduce carbon impurities prior to any thermal treatment steps. Therefore, we find that the rate of bulk metal oxide formation is enhanced, thus enabling a significant reduction of the processing temperature necessary to achieve high-mobility transistors. Optimized TFT structures processed at 300 degrees C show n-type mobility of 35 cm(2)/Vs with on and off ratio of 10(7). Moreover, positive bias stress tests of such devices are found to exhibit one the lowest threshold voltage shifts of any solution-processed amorphous TFT fabricated without a passivation layer.