Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films
Effect of additional sample bias in Meshed Plasma Immersion Ion Deposition (MPIID) on microstructural, surface and mechanical properties of Si-DLC films
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DOI：
10.1016/j.apsusc.2016.02.127
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发表时间：
2016-07
影响因子：
6.7
通讯作者：
Mingzhong Wu;X. Tian;Muqin Li;C. Gong;R. Wei
中科院分区：
文献类型：
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作者：
Mingzhong Wu;X. Tian;Muqin Li;C. Gong;R. Wei
网状等离子体浸没离子沉积（MPIID）是一种基于笼状空心阴极放电的改进工艺，但它可以以高沉积速率（高达6.5 μm/h）沉积厚达50 μm的类金刚石（DLC）薄膜。为了进一步改善DLC薄膜的性能，提出了一种新的MPIID工艺方法，通过在样品和金属网架之间施加附加电压来独立控制入射到样品表面的离子能量。在本研究中，我们使用峰值电压为−1350 V的脉冲直流电源对网状笼进行偏置以产生等离子体，同时对笼内样品施加0 V至−500 V的直流电压偏置以研究其影响。用Ar、c2h2和四甲基硅烷（TMS）的混合物合成了Si-DLC薄膜。沉积后，采用扫描电镜（SEM）、原子力显微镜（AFM）、x射线光电子能谱（XPS）、拉曼光谱（Raman）和纳米压痕等方法研究了Si-DLC薄膜的形貌、表面粗糙度、化学键合和结构、表面硬度和弹性模量。结果表明，离子轰击使薄膜致密化，表面粗糙度降低，H和Si含量降低，纳米硬度(H)和弹性模量(E)增加，沉积速率略有下降。利用handde数据，在偏置薄膜上获得了较高的h3 / e2和h / e2值，表明薄膜具有潜在的优异的力学和摩擦学性能。本文详细讨论了样品偏置电压对薄膜性能的影响，并给出了最佳偏置电压。
Meshed Plasma Immersion Ion Deposition (MPIID) using cage-like hollow cathode discharge is a modified process of conventional PIID, but it allows the deposition of thick diamond-like carbon (DLC) films (up to 50 μm) at a high deposition rate (up to 6.5 μm/h). To further improve the DLC film properties, a new approach to the MPIID process is proposed, in which the energy of ions incident to the sample surface can be independently controlled by an additional voltage applied between the samples and the metal meshed cage. In this study, the meshed cage was biased with a pulsed DC power supply at −1350 V peak voltage for the plasma generation, while the samples inside the cage were biased with a DC voltage from 0 V to −500 V with respect to the cage to study its effect. Si-DLC films were synthesized with a mixture of Ar, C2H2and tetramethylsilane (TMS). After the depositions, scanning electron microscopy (SEM), atomic force microscopy (AFM), X-ray photoelectrons spectroscopy (XPS), Raman spectroscopy and nanoindentation were used to study the morphology, surface roughness, chemical bonding and structure, and the surface hardness as well as the modulus of elasticity of the Si-DLC films. It was observed that the intense ion bombardment significantly densified the films, reduced the surface roughness, reduced the H and Si contents, and increased the nanohardness (H) and modulus of elasticity (E), whereas the deposition rate decreased slightly. Using theHandEdata, high values ofH3/E2andH/Ewere obtained on the biased films, indicating the potential excellent mechanical and tribological properties of the films. In this paper, the effects of the sample bias voltage on the film properties are discussed in detail and the optimal bias voltage is presented.