Chemical Vapor Deposition Growth of Crystalline Mono layer MoSe2
Chemical Vapor Deposition Growth of Crystalline Mono layer MoSe2
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DOI：
10.1021/nn501175k
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发表时间：
2014-05-01
期刊：
影响因子：
17.1
通讯作者：
Ajayan, Pulickel M.
中科院分区：
文献类型：
--
作者：
Wang, Xingli;Gong, Yongji;Ajayan, Pulickel M.
近年来，过渡金属二硫属化合物（如MoS_2、WS_2、MoSe_2和WSe_2）的二维层状结构由于其在电子和光电子器件中的潜在应用而引起了人们的广泛关注。MoS 2和WS 2的硒化物类似物具有更小的带隙和更高的电子迁移率，使它们更适合于实际设备。然而，关于高质量过渡金属二硒化物层的可扩展生长及其性质的研究的报道有限。在这里，我们展示了化学气相沉积（CVD）生长均匀的MoSe 2单层在环境压力下，导致大的单晶岛。的光致发光强度和峰位置表明的MoSe 2单层的直接带隙为1.5 eV。基于MoSe 2单层的背栅场效应晶体管显示出平均迁移率为50 cm（2）V-1 s（-1）的n型沟道行为，该值远高于气相生长的MoS 2报道的4-20 cm（2）V-1 s（-1）。
Recently, two-dimensional layers of transition metal dichalcogenides, such as MoS2, WS2, MoSe2, and WSe2, have attracted much attention for their potential applications In electronic and optoelectronic devices. The selenide analogues of MoS2 and WS2 have smaller band gaps and higher electron mobilities, making them more appropriate for practical devices. However, reports on scalable growth of high quality transition metal diselenide layers and studies of their properties have been limited. Here, we demonstrate the chemical vapor deposition (CVD) growth of uniform MoSe2 monolayers under ambient pressure, resulting in large single crystalline islands. The photoluminescence intensity and peak position indicates a direct band gap of 1.5 eV for the MoSe2 monolayers. A back-gated field effect transistor based on MoSe2 monolayer shows n-type channel behavior with average mobility of 50 cm(2) V-1 s(-1), value much higher than the 4-20 cm(2) V-1 s(-1) reported for vapor phase grown MoS2.