Excess avalanche noise in In0.52Al0.48As
Excess avalanche noise in In0.52Al0.48As
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DOI：
10.1109/jqe.2007.897900
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发表时间：
2007-05-01
影响因子：
2.5
通讯作者：
Pinches, S. M.
中科院分区：
文献类型：
--
作者：
Goh, Y. L.;Marshall, A. R. J.;Pinches, S. M.
已在一系列标称雪崩区域宽度在 0.1 至 2.5 μm 之间的 In0.52Al0.48As p(+)-i-n(+) 和 n(+)-i-p(+) 二极管上测量了雪崩倍增和由电子和空穴注入产生的过量噪声。通过纯电子注入，在所有宽度的有效 kappa = ss/alpha 对应于 0.15 和 0.25 之间的值处测量到低过量噪声。使用非局部电离模型推导启用的电离系数，该模型利用递归方程技术，涵盖约 200 kV/cm 至 1 MV/cm 的电场范围。
Avalanche multiplication and excess noise arising from both electron and hole injection have been measured on a series of In0.52Al0.48As p(+)-i-n(+) and n(+)-i-p(+) diodes with nominal avalanche region widths between 0.1 and 2.5 mu m. With pure electron injection, low excess noise was measured at values corresponding to effective kappa = ss/alpha between 0.15 and 0.25 for all widths. Enabled ionization coefficients were deduced using a non-local ionization model utilizing recurrence equation techniques covering an electric field range from approximately 200 kV/cm to 1 MV/cm.