Large anomalous Hall effect in a silicon-based magnetic semiconductor
Large anomalous Hall effect in a silicon-based magnetic semiconductor
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DOI：
10.1038/nmat1103
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发表时间：
2004-04-01
期刊：
影响因子：
41.2
通讯作者：
Fisk, Z
中科院分区：
文献类型：
--
作者：
Manyala, N;Sidis, Y;Fisk, Z
磁性半导体吸引了人们的极大兴趣，因为它们可能用于自旋电子学，这是一种将电子学与操纵传导电子自旋相结合的新技术。(GaMn)As和(GaMn)N最近成为这一新技术最流行的材料，虽然它们的居里温度正在上升到室温，但这些材料只能以薄膜的形式制备，存在严重缺陷，并且与Si没有明显的兼容性。我们在这里表明，考虑过渡金属单硅化物作为潜在的替代品是有成效的。特别是，我们发现通过在窄间隙绝缘体FeSi中掺杂Co而得到的块体金属磁体具有(GaMn)As非常高的反常霍尔电导，同时显示出高达53K的居里温度。我们的工作为自旋电子学开辟了一个新的领域，包括只基于过渡金属和Si的块体材料，这对其电学性质表现出很大的磁场效应。
Magnetic semiconductors are attracting great interest because of their potential use for spintronics, a new technology that merges electronics with the manipulation of conduction electron spins. (GaMn) As and (GaMn)N have recently emerged as the most popular materials for this new technology, and although their Curie temperatures are rising towards room temperature, these materials can only be fabricated in thin-film form, are heavily defective, and are not obviously compatible with Si. We show here that it is productive to consider transition metal monosilicides as potential alternatives. In particular, we report the discovery that the bulk metallic magnets derived from doping the narrow-gap insulator FeSi with Co share the very high anomalous Hall conductance of ( GaMn) As, while displaying Curie temperatures as high as 53 K. Our work opens up a new arena for spintronics, involving a bulk material based only on transition metals and Si, which displays large magnetic-field effects on its electrical properties.