Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon.
Improved ion implant fluence uniformity in hydrogen enhanced glow discharge plasma immersion ion implantation into silicon.
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DOI：
10.1063/1.4875982
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发表时间：
2014-06
期刊：
影响因子：
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通讯作者：
J. Luo;L. Li;H. T. Liu;K. Yu;Y. Xu;X. Zuo;P. Zhu;Y. Ma;R. Fu;P. Chu
中科院分区：
文献类型：
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作者：
J. Luo;L. Li;H. T. Liu;K. Yu;Y. Xu;X. Zuo;P. Zhu;Y. Ma;R. Fu;P. Chu
增强型辉光放电等离子体浸没离子注入不需要外部等离子体源，但离子聚焦影响横向离子注量均匀性，从而阻碍其在用于薄膜转移和绝缘体上硅制造的高注量氢离子注入中的使用。在样品台和玻璃腔之间插入金属环，提高了离子的均匀性，并随着阴极电压的升高降低了离子注量的不均匀性。二维多网格粒子模拟证实了腔室内电场的变化导致离子聚焦现象的缓解，并通过氢的前向散射实验证实了这一结果。
Enhanced glow discharge plasma immersion ion implantation does not require an external plasma source but ion focusing affects the lateral ion fluence uniformity, thereby hampering its use in high-fluence hydrogen ion implantation for thin film transfer and fabrication of silicon-on-insulator. Insertion of a metal ring between the sample stage and glass chamber improves the ion uniformity and reduces the ion fluence non-uniformity as the cathode voltage is raised. Two-dimensional multiple-grid particle-in-cell simulation confirms that the variation of electric field inside the chamber leads to mitigation of the ion focusing phenomenon and the results are corroborated experimentally by hydrogen forward scattering.