Depth profiling of elastic strains in lattice-mismatched semiconductor heterostructures and strained-layer superlattices.
Depth profiling of elastic strains in lattice-mismatched semiconductor heterostructures and strained-layer superlattices.
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DOI：
10.1103/physrevb.36.7674
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发表时间：
1987-11
期刊：
影响因子：
--
通讯作者：
Olego;Shahzad;Petruzzello;Cammack
中科院分区：
文献类型：
--
作者：
Olego;Shahzad;Petruzzello;Cammack
应变层结构的上表面附近区域的弹性应变可能与样品深层部分的弹性应变有很大不同。在GaAs上生长的ZnSe外延层和ZnSe-$\ mathm {Zn}{\ mathm {S}}_{x}{\ mathm {Se}} {1\ensuremath{-}x}$应变层超晶格中证实了这一效应。通过激光激发下的拉曼散射测量，确定了应变的深度依赖性。靠近顶面的应变值是由更强的面内晶格常数趋于平衡的松弛所驱动的。这种松弛似乎与失配位错的产生无关。
The elastic strains in regions near the top surface of strained-layer structures can be quite different from those in deeper portions of the samples. This effect has been established in epitaxial layers of ZnSe grown on GaAs and ZnSe-$\mathrm{Zn}{\mathrm{S}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$ strained-layer superlattices. The depth dependence of the strains was determined with Raman scattering measurements performed under laser excitation below and above the band gap. The strain values near the top surface are driven by a stronger relaxation of the in-plane lattice constants towards equilibrium. This relaxation appears to be independent of the generation of misfit dislocations.