The Cu2O/CuO/SnO2 transparent pn junction film device towards photovoltaic enhancement with Cu2+ self-oxidation transition layer
The Cu2O/CuO/SnO2 transparent pn junction film device towards photovoltaic enhancement with Cu2+ self-oxidation transition layer
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DOI：
10.1007/s10853-020-05704-1
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发表时间：
2021-01
影响因子：
4.5
通讯作者：
Qingtao Yu;Jiaqi Pan;J. Mei;Zhanfen Chen;Panhong Wang;Peipei Wang;Jingjing Wang;Changsheng Song-Changshe
中科院分区：
文献类型：
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作者：
Qingtao Yu;Jiaqi Pan;J. Mei;Zhanfen Chen;Panhong Wang;Peipei Wang;Jingjing Wang;Changsheng Song-Changshe
用一种简单的热氧化-溅射方法制备了具有Cu2+自氧化过渡层的Cu2O/CuO/SnO2透明pn结膜器件。其中，用简单的溅射方法制备Cu2O，用热自氧化方法在Cu2O薄膜表面制备CuO过渡层，然后用溅射方法在CuO过渡层表面沉积SnO2薄膜。结果表明，制备的透明光伏器件具有约 ~ 75%的高透明度，光伏转换效率明显提高约 ~ 约450倍，在10000℃的S周期内表现出较好的稳定性，这主要归因于Cu2+的自氧化过渡层；其中，合适的费米能级和较好的晶格匹配可以为载流子的输运提供良好的通道，可见光响应可以改善光生载流子的激发和注入。此外，Cu2O/CuO/SnO2的结构设计可以防止Cu2O的氧化，从而提高光伏稳定性。
AbstractThe Cu2O/CuO/SnO2transparent pn junction film device with Cu2+self-oxidation transition layer is prepared via a simple thermal oxidation-sputtering method. There, the Cu2O is prepared via a simple sputtering method, the CuO transition layer is prepared via a thermal self-oxidation method on the surface of Cu2O film, and subsequently the SnO2film is deposited via the sputtering method on the surface of CuO transition layer. As revealed, the as-prepared transparent photovoltaic device exhibits highly transparency of about ~ 75%, obvious photovoltaic conversion enhancement of about ~ 450 folds than unmodified device, decent stability during 10000 s’ cycle, which can be mainly ascribed to the Cu2+self-oxidation transition layer; there, the appropriate Fermi level and nicer lattice matching can provide a decent channel for charge carrier transport, and the visible light response can improve photo-generated carrier excitation and injection. Additionally, the structure design of Cu2O/CuO/SnO2can prevent the oxidation of Cu2O to increase photovoltaic stability.Graphical abstract