Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis
Damage evolution and recovery on both Si and C sublattices in Al-implanted 4H–SiC studied by Rutherford backscattering spectroscopy and nuclear reaction analysis
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DOI：
10.1063/1.1469204
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发表时间：
2002-05
影响因子：
3.2
通讯作者：
Yanwen Zhang;W. J. Weber;Weilin Jiang;A. Hallén;G. Possnert
中科院分区：
文献类型：
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作者：
Yanwen Zhang;W. J. Weber;Weilin Jiang;A. Hallén;G. Possnert
利用卢瑟福后向散射光谱（RBS）和12C(d,p)13C核反应分析（NRA），在通道几何中使用0.94 MeV氘（d +）束，研究了在150 K下1.1 MeV Al22+分子离子辐照4H-SiC外延层对1.5×1013 ~ 2.25×1014 Al cm−2离子影响的损伤演变和随后的恢复。通过RBS散射和NRA反应产率同时测量了Si和C亚晶格上的无序性。两个亚晶格上的相对无序遵循离子影响的非线性依赖，这与基于简单缺陷积累和直接影响、缺陷刺激的非晶化过程的模型一致。在低离子影响下，C亚晶格的相对无序度高于Si亚晶格。等时退火至870 K时，在低至中等损伤水平下，在~ 350、520和650 K处存在三个不同的恢复阶段。在高度损坏的样品中，产生了埋藏的非晶层，离子…
Damage evolution and subsequent recovery in 4H–SiC epitaxial layers irradiated with 1.1 MeV Al22+ molecular ions at 150 K to ion fluences from 1.5×1013 to 2.25×1014 Al cm−2 were studied by Rutherford backscattering spectroscopy (RBS) and 12C(d,p)13C nuclear reaction analysis (NRA) using a 0.94 MeV deuterium (D+) beam in channeling geometry. Disorder on both the Si and C sublattices was measured simultaneously from the RBS scattering and NRA reaction yields. The relative disorder on both sublattices follows a nonlinear dependence on ion fluence that is consistent with a model based on simple defect accumulation and a direct-impact, defect-stimulated process for amorphization. At low ion fluences, the relative disorder on the C sublattice is higher than that on the Si sublattice. Isochronal annealing up to 870 K revealed the existence of three distinct recovery stages at ∼350, 520, and 650 K for low to intermediate damage levels. In highly damaged samples, where a buried amorphous layer is produced, the ons...