Scanning Tunneling Microscopy Barrier Height Imaging of Subsurface Dopant Atoms on Hydrogen-Terminated Si(111)
Scanning Tunneling Microscopy Barrier Height Imaging of Subsurface Dopant Atoms on Hydrogen-Terminated Si(111)
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氢封端 Si(111) 上次表面掺杂原子的扫描隧道显微镜势垒高度成像
DOI：
10.1143/jjap.43.4571
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发表时间：
2004
影响因子：
1.5
通讯作者：
A. Sakai
中科院分区：
文献类型：
--
作者：
Kengo Kobayashi;S. Kurokawa;A. Sakai
利用扫描隧道显微镜（STM）和势垒高度（BH）成像研究了氢封端的Si（111）1×1表面下的掺杂原子。由于氢封端的Si（111）表面的弱屏蔽效应，亚表面施主和受主可以被STM成像。从BH图像中，我们可以推断出在表面下掺杂剂位点处BH的局部变化。所观察到的BH变化的符号和幅度都与假设掺杂剂电位的屏蔽库仑电位的计算结果非常一致。
Dopant atoms beneath a hydrogen-terminated Si(111) 1×1 surface are investigated by scanning tunneling microscopy (STM) and barrier height (BH) imaging. Because of the weak screening effect of the hydrogen-terminated Si(111) surface, subsurface donors and acceptors can be imaged by STM. From BH images, we can deduce a local change in BH at subsurface dopant sites. Both the sign and magnitude of the observed BH change are in good agreement with calculations assuming a screened Coulomb potential for a dopant potential.