Phase boundary fluctuations on Si(111)
Phase boundary fluctuations on Si(111)
复制标题
Si(111) 上的相界涨落
DOI：
--
复制
发表时间：
2001
期刊：
影响因子：
--
通讯作者：
R. Tromp
中科院分区：
文献类型：
--
作者：
J. Hannon;R. Tromp
我们用低能电子显微术研究了Si（111）表面在相变温度1135 K附近分离7×7和1×1区的相界的热涨落。我们发现，波动描述的相界刚度为180±30 meV/nm。分析的曲折的相边界被用来表征相边界之间的弹性排斥。我们对各相之间的表面应力差的估计为0.06±0.01 eV/A ~ 2，与Twesten和吉布森[R. D. Twesten和J.M.吉布森，物理评论B 50，17628（1994）]。
We have used low-energy electron microscopy to investigate the thermal fluctuation of phase boundaries separating 7×7 and 1×1 regions of the Si(111) surface near the phase transition temperature of 1135 K. We find that the fluctuations are described by a phase boundary stiffness of 180±30 meV/nm. Analysis of the meandering of the phase boundary is used to characterize the elastic repulsion between phase boundaries. Our estimate of the surface stress difference between the phases, 0.06±0.01 eV/A2, is consistent with the measurement of Twesten and Gibson [R. D. Twesten and J. M. Gibson, Phys. Rev. B 50, 17628 (1994)].