Passive devices at 2 μm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited]
Passive devices at 2 μm wavelength on 200 mm CMOS-compatible silicon photonics platform [Invited]
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DOI：
10.3788/col202119.071301
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发表时间：
2021-07-10
影响因子：
3.5
通讯作者：
Lin, Hongtao
中科院分区：
文献类型：
--
作者：
Ma, Hui;Yang, Haotian;Lin, Hongtao
2 μ m波段作为光通信和光传感领域的一个很有前途的光谱窗口，其片上器件的实现具有重要意义。2 μ m硅光子学平台的发展主要取决于无源器件的性能。在这项工作中，无源器件是在硅光子多项目晶圆工艺制造。所设计的微环谐振器具有0.6 μ m宽的硅脊波导，基于220 nm绝缘体上硅平台，实现了3.0 × 10（5）的高本征品质因数。传播损耗计算为1.62 dB/cm。此外，波导交叉，多模干涉仪，马赫-曾德尔干涉仪在2 μ m的性能良好的演示。
As a promising spectral window for optical communication and sensing, it is of great significance to realize on-chip devices at the 2 mu m waveband. The development of the 2 mu m silicon photonic platform mainly depends on the performance of passive devices. In this work, the passive devices were fabricated in the silicon photonic multi-project wafer process. The designed micro-ring resonator with a 0.6 mu m wide silicon ridge waveguide based on a 220 nm silicon-on-insulator platform achieves a high intrinsic quality factor of 3.0 x 10(5). The propagation loss is calculated as 1.62 dB/cm. In addition, the waveguide crossing, multimode interferometer, and Mach-Zehnder interferometer were demonstrated at 2 mu m with good performances.