Molecular beam deposited thin films of pentacene for organic field effect transistor applications
Molecular beam deposited thin films of pentacene for organic field effect transistor applications
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DOI：
10.1063/1.363032
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发表时间：
1996-08-15
影响因子：
3.2
通讯作者：
Pomp, A
中科院分区：
文献类型：
--
作者：
Dimitrakopoulos, CD;Brown, AR;Pomp, A
用分子束沉积法制备了并五苯薄膜，并用X射线衍射仪和扫描电子显微镜对薄膜的结构和形貌进行了表征。利用基于这种薄膜的金属绝缘体半导体场效应晶体管器件研究了它们的输运特性。报道了含有室温下沉积的并五苯薄膜的器件的最大场效应迁移率为0.038 cm(-2)V-1 S(-1)。结构表征表明存在两种相共存：热力学稳定的单晶相和动力学有利的亚稳薄膜相。这种混合相薄膜是在低沉积速率与55℃的衬底温度相结合的情况下产生的，混合相薄膜的输运性能逊于仅由一相组成的薄膜，而在低表面迁移率条件下沉积的非晶薄膜具有极低的电导率。使用预提纯的并五苯作为源材料，使得五苯薄膜中的自由载流子浓度比用原始并五苯制备的薄膜中的自由载流子浓度低一个数量级。(C)1996年美国物理研究所。
Pentacene films deposited with molecular beam deposition have been fabricated and characterized with respect to structure and morphology using x-ray diffraction and scanning electron microscopy. Metal-insulator semiconductor field-effect transistor devices based on such films were used to study their transport properties. A maximum field-effect mobility of 0.038 cm(-2) V-1 s(-1) is reported for devices incorporating pentacene films deposited at room temperature. The structural characterization revealed the coexistence of two phases: the thermodynamically stable single-crystal phase and the kinetically favored, metastable thin-film phase. Such mixed phase films were produced when low deposition rates were used in combination with a substrate temperature of 55 degrees C. Mixed phase films had transport properties inferior to films consisting solely of one phase, while amorphous films deposited at low surface mobility conditions had extremely low conductivity. Use of prepurified pentacene as source material resulted in an order of magnitude lower free-carrier concentration in the pentacene film as compared to films made with as-received pentacene. (C) 1996 American Institute of Physics.