Kinetics of Thermal Growth of HCl ‐ 02 Oxides on Silicon
Kinetics of Thermal Growth of HCl ‐ 02 Oxides on Silicon
复制标题
硅上HCl-02氧化物的热生长动力学
DOI：
10.1149/1.2403311
复制
发表时间：
1973
影响因子：
3.9
通讯作者：
J. Iwamura
中科院分区：
文献类型：
--
作者：
K. Hirabayashi;J. Iwamura
结论 1．根据 Tubandt 测试的结果，玻璃 A、B 和 C 中的主要传导机制是电子，玻璃 D 中的主要传导机制是离子。 2. 对于每种玻璃，损耗因数在未改变介电常数色散中点出现的频率范围内达到峰值。 3. 根据弛豫频率以下的介电常数曲线的斜率和Tubandt测试的结果，推断玻璃A和B的传导机制仅为电子，玻璃C的传导机制为混合离子电子，玻璃D的传导机制仅为离子。
Conclusions1. Based on the results of the Tubandt tests, the main conduction mechanism is electronic in glasses A, B, and C and ionic in glass D. 2. The loss factorac, for each glass, peaks in the frequency range in which the midpoint of the dispersion of the unaltered dielectric constant occurs. 3. From the slopes of the dielectric constant curves below the relaxation frequencies and the results of the Tubandt tests, it is deduced that the conduction mechanism is only electronic for glasses A and B, mixed ionic-electronic for glass C, and only ionic for glass D.