Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection
Palladium nanoparticle decorated silicon nanowire field-effect transistor with side-gates for hydrogen gas detection
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DOI：
10.1063/1.4861228
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发表时间：
2014-01-06
影响因子：
4
通讯作者：
Park, Inkyu
中科院分区：
文献类型：
--
作者：
Ahn, Jae-Hyuk;Yun, Jeonghoon;Park, Inkyu
介绍了一种具有局部边门和Pd表面修饰的硅纳米线场效应晶体管（SiNW FET）用于氢（H-2）检测。采用自顶向下的方法制备了SiNW场效应管，并通过电子束蒸发将钯纳米粒子（PdNPs）功能化，用于H-2检测。pdnp修饰器件的漏极电流对不同浓度的H-2有可逆响应。局部边门允许每个传感器单独寻址，并通过调整工作区域到亚阈值区域来提高灵敏度。利用非功能化装置进行的对照实验验证了氢敏感性是由在SiNW表面功能化的PdNPs引起的。(C) 2014 AIP出版有限责任公司
A silicon nanowire field-effect transistor (SiNW FET) with local side-gates and Pd surface decoration is demonstrated for hydrogen (H-2) detection. The SiNW FETs are fabricated by top-down method and functionalized with palladium nanoparticles (PdNPs) through electron beam evaporation for H-2 detection. The drain current of the PdNP-decorated device reversibly responds to H-2 at different concentrations. The local side-gates allow individual addressing of each sensor and enhance the sensitivity by adjusting the working region to the subthreshold regime. A control experiment using a non-functionalized device verifies that the hydrogen-sensitivity is originated from the PdNPs functionalized on the SiNW surface. (C) 2014 AIP Publishing LLC.