Universal scaling of the critical temperature for thin films near the superconducting-to-insulating transition
Universal scaling of the critical temperature for thin films near the superconducting-to-insulating transition
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DOI：
10.1103/physrevb.90.214515
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发表时间：
2014-12-15
影响因子：
3.7
通讯作者：
Berggren, Karl K.
中科院分区：
文献类型：
--
作者：
Ivry, Yachin;Kim, Chung-Soo;Berggren, Karl K.
超导薄膜形成了一个独特的平台，几何限制，强烈相互作用的电子。它们允许无序和超导性之间的内在竞争，这反过来又使有趣的超导到绝缘转变成为可能，并被认为有助于理解高Tc超导性。此外，理解薄膜超导性是技术上必不可少的，例如。例如，在一个实施例中，用于光电探测器和量子计算机。因此，临界温度（Tc）、薄膜厚度（d）和薄层电阻（Rs）之间缺乏普遍的关系，这阻碍了我们对超导性开始的理解和小型化超导器件的发展。我们报道，在薄膜中，超导性标度为dT（c）（R-s）。我们通过分析过去46年来发布的不同材料的数据来证明了这种扩展（并促进了该数据库的进一步分析）。此外，我们通过实验证实了NbN薄膜的缩放，用幂律对其进行量化，探索其可能的起源，并证明其对纳米尺度超导薄膜器件的有用性。
Thin superconducting films form a unique platform for geometrically confined, strongly interacting electrons. They allow an inherent competition between disorder and superconductivity, which in turn enables the intriguing superconducting-to-insulating transition and is believed to facilitate the comprehension of high-Tc superconductivity. Furthermore, understanding thin film superconductivity is technologically essential, e. g., for photodetectors and quantum computers. Consequently, the absence of established universal relationships between critical temperature (T-c), film thickness (d), and sheet resistance (R-s) hinders both our understanding of the onset of the superconductivity and the development of miniaturized superconducting devices. We report that in thin films, superconductivity scales as dT(c) (R-s). We demonstrated this scaling by analyzing the data published over the past 46 years for different materials (and facilitated this database for further analysis). Moreover, we experimentally confirmed the discovered scaling for NbN films, quantified it with a power law, explored its possible origin, and demonstrated its usefulness for nanometer-length-scale superconducting film-based devices.