Hydrogen defect-level pinning in semiconductors: the muonium equivalent.
Hydrogen defect-level pinning in semiconductors: the muonium equivalent.
复制标题
半导体中的氢缺陷级钉扎：μ等效物。
作者：
R. Lichti;K. Chow;S. Cox
我们确定了六种半导体材料（Si、Ge、GaAs、GaP、ZnSe 和 6H-SiC）中钍的施主和受主能级的位置，作为氢缺陷级钉扎的测试。在理论能带排列中，我们的结果表明平衡电荷跃迁水平 Mu(+/-) 的共同能量在实验不确定性范围内。然而，这比氢的等效能级预计固定的能量高出近 0.5 eV。零点能量的修正仅占此差异的 10% 左右。我们还报告了 Mu 供体和受体水平之间（负 U）差异的实验结果，以便与相同材料中 H 杂质的计算值进行比较。
We have determined locations for the donor and acceptor levels of muonium in six semiconductor materials (Si, Ge, GaAs, GaP, ZnSe, and 6H-SiC) as a test of defect-level pinning for hydrogen. Within theoretical band alignments, our results indicate a common energy for the equilibrium charge-transition level Mu(+/-) to within experimental uncertainties. However, this is nearly 0.5 eV higher than the energy at which the equivalent level for hydrogen was predicted to be pinned. Corrections for zero-point energy account for only about 10% of this difference. We also report experimental results for the (negative-U) difference between donor and acceptor levels for Mu to be compared with calculated values for H impurities in the same materials.