Whispering gallery resonances in semiconductor micropillars
Whispering gallery resonances in semiconductor micropillars
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DOI：
10.1063/1.2771373
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发表时间：
2007-08
影响因子：
4
通讯作者：
V. Astratov;Seungmoo Yang;S. Lam;B. Jones;D. Sanvitto;D. Whittaker;A. M. Fox;M. S. Skolnick;A. Tahraoui;P. Fry;M. Hopkinson
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文献类型：
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作者：
V. Astratov;Seungmoo Yang;S. Lam;B. Jones;D. Sanvitto;D. Whittaker;A. M. Fox;M. S. Skolnick;A. Tahraoui;P. Fry;M. Hopkinson
在这篇论文中，作者在4-5μm Al(Ga)As / GaAs微柱中观察到高质量（Q高达20000）的窃音廊模式（WGMs），其模态体积小V ~ 0.3μm3，采用激发和发射收集方向均垂直于柱侧壁的实验几何结构。他们表明，与同等尺寸的光柱中的“光子点”态相比，WGMs为强耦合应用Q / V提供了至少两倍的优点值。
In this letter, the authors observe high quality (Q up to 20 000) whispering gallery modes (WGMs) with small modal volumes V∼0.3μm3 in 4–5μm Al(Ga)As∕GaAs micropillars by employing an experimental geometry in which both excitation and collection of emission are in a direction normal to the sidewalls of the pillars. They show that WGMs provide at least two times larger values of the figure of merit for strong coupling applications Q∕V compared to “photonic dot” states in pillars with comparable size.