Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions
Switching of tunnel magnetoresistance by domain wall motion in (Ga,Mn)As-based magnetic tunnel junctions
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(Ga,Mn)As 基磁隧道结中通过畴壁运动切换隧道磁阻
DOI：
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发表时间：
2007
期刊：
影响因子：
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通讯作者：
H. Ohno
中科院分区：
文献类型：
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作者：
M. Fukuda;M. Yamanouchi;F. Matsukura;H. Ohno
磁隧道结（MTJ）中的隧道磁阻开关已经通过其中一个电极中的磁畴壁运动来实现。所制造的器件具有两个（Ga，Mn）As基MTJ，具有共同的底部（Ga，Mn）As电极，其中畴壁运动通过磁场和电流发生。这种配置不仅允许观察开关，而且时间分辨的隧道磁阻的磁畴壁的位置检测。
Switching of tunnel magnetoresistance in magnetic tunnel junctions (MTJs) has been achieved by magnetic domain wall motion in one of the electrodes. The fabricated devices have two (Ga,Mn)As-based MTJs with a common bottom (Ga,Mn)As electrode, in which the domain wall motion takes place both by magnetic field and by current. This configuration allows not only the observation of switching but also time-resolved detection of the position of the domain wall by the tunnel magnetoresistance.