Electron microscopy of AlGaN-based multilayers for UV laser devices
Electron microscopy of AlGaN-based multilayers for UV laser devices
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用于紫外激光器件的 AlGaN 多层膜的电子显微镜
DOI：
10.1088/1742-6596/241/1/012048
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
Lari L
中科院分区：
文献类型：
--
作者：
Lari L
紫外激光技术是氮化物半导体研究中最具挑战性和最重要的领域之一。我们部门最近开发了一种新的生长技术，使用薄GaN夹层方法，用于UV-LED。已经证明了如此生长的LED的改善的光学质量。类似的生长方法现在已经被用于生长UV激光器结构，其已经通过光泵浦在~ 340 nm处显示出受激发射（激光发射）。我们在这里报告的微观结构的研究，外延质量和元素分布的这种铝镓氮化物基异质结使用各种电子显微镜技术的组合。
UV-Laser technology is one of the most challenging and important areas in nitride semiconductor research. A new growth technology, using a thin GaN interlayer approach, has recently been developed for UV-LEDs in our department. Improved optical quality of so grown LEDs has been demonstrated. A similar growth approach has now been used to grow an UV-laser structure that has shown stimulated emission (lasing) at~ 340 nm via optical pumping. We report here a study of the microstructure, the epitaxial quality and the elemental distributions of such an aluminium gallium nitride-based heterostructure using a combination of various electron microscopy techniques.
影响因子：
4
作者：
J. Bai;Tao Wang;P. Parbrook;Q. Wang;K. B. Lee;A. G. Cullis
通讯作者：
J. Bai;Tao Wang;P. Parbrook;Q. Wang;K. B. Lee;A. G. Cullis