Ideal hydrogen termination of Si(001) surface by wet‐chemical preparation
Ideal hydrogen termination of Si(001) surface by wet‐chemical preparation
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通过湿化学制备实现 Si(001) 表面的理想氢终止
DOI：
10.1063/1.114326
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发表时间：
1995
影响因子：
4
通讯作者：
H. Tokumoto
中科院分区：
文献类型：
--
作者：
Y. Morita;H. Tokumoto
采用HF：HCl=1：19（pH<1）的湿化学方法制备了接近理想的Si（001）表面。通过扫描隧道显微镜检查表面，发现被均匀的二氢化物相覆盖。它的成功制备是以下事实的直接结果：由于在蚀刻剂溶液中的低浓度的OH离子的抑制（111）面的形成和由于有序台阶的形成的表面结构的稳定。
A nearly ideal Si(001) surface was prepared by a wet‐chemical method with a solution of HF:HCl=1:19 (pH<1). The surface was examined by scanning tunneling microscopy and was found to be covered by the uniform dihydride phase. Its successful preparation was the direct consequence of the following facts: The suppression of the (111) facet formation due to a low concentration of OH ions in the etchant solution and the stabilization of the surfaces structure due to the formation of the ordered steps.