Ferroelectric thin films : basic properties and device physics for memory applications
Ferroelectric thin films : basic properties and device physics for memory applications
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发表时间：
2005
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通讯作者：
奥山 雅則;Y. Ishibashi
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作者：
奥山 雅則;Y. Ishibashi
铁电薄膜中相变的理论方面。- 层状结构铁电薄膜的化学溶液沉积。- MOCVD 制备的 PB 基铁电薄膜。- MOCVD PZT 和 Bi4Ti3O12 基薄膜的自发极化和晶体取向控制。- 溅射制备的菱面体 PZT 薄膜。- 扫描非线性电介质显微镜.- 近同形相界的铁电性和增强压电性分析。- 铁电固溶体单晶介电性能中域结构之间的相关性。- 钙钛矿型介电化合物中的弛豫行为。- 通过超晶格技术人工控制 Ba(Zr,Ti)O3 中 B 位离子的有序/无序状态。- 铁电界面物理：一种尝试纳米铁电物理。- 使用 YMNO3 薄膜制备铁电-绝缘体-半导体结并表征其性能。- 改善金属-铁电-绝缘体-半导体 (MFIS) 结构中的记忆保留。
Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films.- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films.- PB-Based Ferroelectric Thin Films Prepared by MOCVD.- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films.- Rhombohedral PZT Thin Films Prepared by Sputtering.- Scanning Nonlinear Dielectric Microscope.- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary.- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions.- Relaxor Behaviors in Perovskite-Type Dielectric Compounds.- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique.- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics.- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film.- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) Structure.